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FMH20N60S1 - N-Channel MOSFET

FMH20N60S1 Description

isc N-Channel MOSFET Transistor .

FMH20N60S1 Features

* Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max)
* 100% avalanche tested

FMH20N60S1 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature THERMAL CHARACTERI

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Datasheet Details

Part number
FMH20N60S1
Manufacturer
INCHANGE
File Size
316.88 KB
Datasheet
FMH20N60S1-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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