FMH21N50ES N-CHANNEL SILICON POWER MOSFET

Fuji Electric

Description

www.DataSheet.co.kr FMH21N50ES Super FAP-E3S series .
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Rep.

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Datasheet Specifications

Part number: FMH21N50ES
Manufacturer: Fuji Electric
File Size: 604.95 KB
Datasheet: FMH21N50ES_FujiElectric.pdf
Description: N-CHANNEL SILICON POWER MOSFET

Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF

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FMH21N50ES N-CHANNEL SILICON POWER MOSFET Fuji Electric

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