Part number:
FMH06N90E
Manufacturer:
Fuji Electric
File Size:
563.67 KB
Description:
N-channel silicon power mosfet.
FMH06N90E Datasheet (563.67 KB)
* Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFE
FMH06N90E Datasheet (563.67 KB)
FMH06N90E
Fuji Electric
563.67 KB
N-channel silicon power mosfet.
📁 Related Datasheet
FMH07N90E - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
.DataSheet.co.kr
http://.fujisemi.
FMH07N90E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS(on) charact.
FMH07N90E - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FMH07N90E
·FEATURES ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Static Drain-Source On-R.
FMH08N80E - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
:.
FMH09N90E - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
.DataSheet.co.kr
FMH09N90E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.
FMH09N90E - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FMH09N90E
·FEATURES ·With TO-3PN packaging ·Low on-resistance ·Low drive current ·Easy to use.
FMH-12R - Ultra-Fast-Recovery Rectifier Diodes
(Sanken electric)
Ultra-Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
E.
FMH11N90E - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
.DataSheet.co.kr
FMH11N90E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.
FMH13N60ES - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
.DataSheet.co.kr
Super FAP-E3S series
Features
FMH13N60ES
Outline Drawings [mm]
TO-3P(Q)
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equiv.
