FMH16N60ES Datasheet, Mosfet, Fuji Electric

FMH16N60ES Features

• Mosfet Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band

PDF File Details

Part number:

FMH16N60ES

Manufacturer:

Fuji Electric

File Size:

639.21kb

Download:

📄 Datasheet

Description:

N-channel silicon power mosfet. Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanch

FMH16N60ES Application

• Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolu

TAGS

FMH16N60ES

Fuji Electric

📁 Related Datasheet

FMH16N50ES - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMH16N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla.

FMH11N90E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMH11N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.

FMH13N60ES - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr Super FAP-E3S series Features FMH13N60ES Outline Drawings [mm] TO-3P(Q) FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Equiv.

FMH17N60ES - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMH17N60ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla.

FMH19N60E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMH19N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.

FMH19N60ES - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMH19N60ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla.

FMH-12R - Ultra-Fast-Recovery Rectifier Diodes (Sanken electric)
Ultra-Fast-Recovery Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot E.

FMH06N90E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr http://.fujisemi. FMH06N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) charact.

FMH07N90E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr http://.fujisemi. FMH07N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) charact.

FMH07N90E - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FMH07N90E ·FEATURES ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-R.