FMH13N60ES Datasheet - Fuji Electric

FMH13N60ES N-CHANNEL SILICON POWER MOSFET

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Ope.

FMH13N60ES Features

* FMH13N60ES Outline Drawings [mm] TO-3P(Q) FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Equivalent circuit schematic Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Nar

FMH13N60ES_FujiElectric.pdf