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FMV20N60S1 - N-CHANNEL SILICON POWER MOSFET

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FMV20N60S1 Product details

Description

Drain-Source Voltage Continuous Drain Current Symbol VDS VDSX ID Pulsed Drain Current IDP Gate-Source Voltage VGS Characteristics 600 600 ±20 ±12.6 ±60 ±30 Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6.6 Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Isolation Voltage Viso Note 1 : Li

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