FMV20N60S1 - N-CHANNEL SILICON POWER MOSFET
Drain-Source Voltage Continuous Drain Current Symbol VDS VDSX ID Pulsed Drain Current IDP Gate-Source Voltage VGS Characteristics 600 600 ±20 ±12.6 ±60 ±30 Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6.6 Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Pea
