FMV23N50ES

N-CHANNEL SILICON POWER MOSFET

Fuji Electric

FMV23N50ES Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF

FMV23N50ES General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Op.

FMV23N50ES Datasheet (599.66 KB)

FMV23N50ES Datasheet Preview — Preview of FMV23N50ES PDF

Datasheet Details

Part number:

FMV23N50ES

Manufacturer:

Fuji Electric

File Size:

599.66 KB

Description:

N-channel silicon power mosfet.

📁 Related Datasheet

FMV23N50E N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

FMV20N50E N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

FMV20N50ES N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

FMV20N60S1 N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

FMV20N60S1 N-Channel MOSFET (INCHANGE)

FMV20N60S1FD N-Channel enhancement mode power MOSFET (Fuji Electric)

FMV21N50ES N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

FMV24N25G N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

FMV-3FU Damper Diode (Sanken electric)

FMV-3GU Damper Diode (Sanken electric)

TAGS

FMV23N50ES N-CHANNEL SILICON POWER MOSFET Fuji Electric

Image Gallery

FMV23N50ES Features

FMV23N50ES General Description

Datasheet Details

File Size:

Description:

FMV23N50ES Distributor