FMV21N50ES

N-CHANNEL SILICON POWER MOSFET

Fuji Electric

FMV21N50ES Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF

FMV21N50ES General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Op.

FMV21N50ES Datasheet (595.68 KB)

FMV21N50ES Datasheet Preview — Preview of FMV21N50ES PDF

Datasheet Details

Part number:

FMV21N50ES

Manufacturer:

Fuji Electric

File Size:

595.68 KB

Description:

N-channel silicon power mosfet.

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FMV21N50ES N-CHANNEL SILICON POWER MOSFET Fuji Electric

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FMV21N50ES Features

FMV21N50ES General Description

Datasheet Details

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Description:

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