High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
500V
1,5
✔ K2876-01MR Application
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteris
K2872-01MR, Fuji Electric
2SK2872-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
K2873-01, Fuji Electric
2SK2873-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
K2875-01, Fuji Electric
2SK2875-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
K2800, Hitachi Semiconductor
2SK2800
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-513G (Z) 8th. Edition Jun 1998 Features
..
• Low on-resistance.
K2803, Sanken
2SK2803
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±3 ± 12 30 (Tc = 25ºC) 30 3 150 –55 to +15.
K2806-01, Fuji Electric
2SK2806-01
FAP-IIIB Series
> Features
.. High Current
N-channel MOS-FET
30V
0,02Ω
35A
30W
> Outline Drawing
Low On-Resistance N.
K2826, NEC
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effec.
K2828, Hitachi
2SK2828
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary b.
