K2835 Datasheet - Toshiba Semiconductor

K2835 2SK2835

2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2835 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 0.56 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.5 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 200 V) l Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source vol.

K2835-ToshibaSemiconductor.pdf