K2881 - N-Channel Transistor
(Isahaya Electronics)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
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K2885 - 2SK2885
(Hitachi Semiconductor)
2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 10mΩ typ.
• 4V gate drive devices..
K2887 - 2SK2887
(Rohm)
Transistors
Switching (200V, 3A)
2SK2887
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source v.
K2889 - 2SK2889
(Toshiba Semiconductor)
2SK2889
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2889
Chopper Regulator, DC−DC Converter and Motor Drive Applications
.
K2800 - 2SK2800
(Hitachi Semiconductor)
2SK2800
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-513G (Z) 8th. Edition Jun 1998 Features
..
• Low on-resistance.
K2803 - 2SK2803
(Sanken)
2SK2803
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±3 ± 12 30 (Tc = 25ºC) 30 3 150 –55 to +15.