Datasheet4U.com

YG811S04R - Silicon Diode

Fuji Electric

📥 Download Datasheet

YG811S04R Datasheet Preview — Preview of YG811S04R PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	YG811S04R
Manufacturer	Fuji Electric
File Size	73.22 KB
Description	Silicon Diode
Datasheet	YG811S04R_FujiElectric.pdf

YG811S04R Product details

Features

Low VF Super high speed switching. High reliability by planer design. 15±0.3 0.6±0.2 2.7±0.2 5.08±0.4.

📁 YG811S04R Similar Datasheet

YG802C03R - SCHOTTKY BARRIER DIODE (ETC)
YG805C10 - Dual Schottky Rectifier (Galaxy)
YG865C04R - Low IR Schottky barrier diode (Fuji)
YG865C10R - Low IR Schottky barrier diode (Fuji)
YG865C15R - High Voltage Schottky barrier diode (Fuji)
YG875C20R - Diode (Fuji)
YG882C02R - Schottky Barrier Diode (Fuji Semiconductors)
YG885C02R - SCHOTTKY BARRIER DIODE (ETC)

Other Datasheets by Fuji Electric

YG811S06R - SCHOTTKY BARRIER DIODE
YG811S09 - SCHOTTKY BARRIER DIODE
YG811S09R - SCHOTTKY BARRIER DIODE
YG812S04R - SCHOTTKY BARRIER DIODE
YG801C04 - SCHOTTKY BARRIER DIODE
YG801C04R - SCHOTTKY BARRIER DIODE

Published: Apr 7, 2008 |