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FMW20N60S1HF - N-CHANNEL SILICON POWER MOSFET

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FMW20N60S1HF Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Note 1 : Limited by maximum channel temperature. 2 : Tch ≤150°C, See Fig.1 and Fig.2 Note 3 : Starting Tch =25°C, IAS=2A, L=216mH, VDD =60V, RG =50Ω, S

Features

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