* High DC Current Gain: hFE = 2000 (Min.) (at VCE = 3V, IC =3A)
* Low Saturation Voltage: VCE(sat) = 1.51 (Max.) (at IC =3A)
* Complementary to D55A7D
* Isolated TO-220 package EQUIVALENT CIRCUIT COLLECTOR ~
D54A7D
GE
230.31 KB
Npn power darlington transistors.
NPN POWER DARLINGTON TRANSISTORS
D54A7D
100 VOLTS 7 AMP, 30 WATTS
Designed for high power switching applications, hammer drive, pulse motor drive ap.
📁 Related Datasheet
D548 - 2SD548
(Toshiba)
SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS. MOTOR CONTROL APPLICAT.
D549 - 2SD549
(Toshiba)
t
:
SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER)
2SD549
PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS.
7.9MAX.
Unit in m.
D54D6D - NPN POWER DARLINGTON TRANSISTORS
(GE)
NPN POWER DARLINGTON TRANSISTORS
D54D6D
400 VOLTS 6 AMP, 25 WATTS
Designed for igniter applications, high voltage switching appl ications.
Features:.
D54FY7D - NPN POWER DARLINGTON TRANSISTORS
(GE)
NPN POWER DARLINGTON TRANSISTORS
D54FY7D
80 VOLTS 7 AMP, 30 WATTS
Designed for high power switching applications, hammer drive, pulse motor drive ap.
D54H6D - NPN POWER DARLINGTON TRANSISTORS
(GE)
NPN POWER DARLINGTON TRANSISTORS
D54H6D
250 VOLTS 6 AMP, 25 WATTS
Designed for igniter applications, high voltage switching appl ications.
Features:.
D5001UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D5001UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2
D
3
E
F
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS R.
D5002UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D5002UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2
D
3
E
F
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS R.
D5006UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D5006UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B
C
A
1
2
3
E
FG
6
5
4
J
D H K
QN
PIN 1 PIN 3 PIN 5
SOURCE.
