Part number:
D54H6D
Manufacturer:
GE
File Size:
182.42 KB
Description:
Npn power darlington transistors.
* High DC Current Gain: hFE =2000 (Min.) (at VCE =2V, IC =2A)
* Isolated TO-220 package. CASE STYLE TO-2201S DIMENSIONS ARE IN INCHES AND (MILLIMETERS) EQUIVALENT CIRCUIT :fI
* S
* {T":'O'BASE0 wL.. _ _ _ _ _ _ _ _ _ _ .J EMITTER ;
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D54H6D
GE
182.42 KB
Npn power darlington transistors.
📁 Related Datasheet
D548 - 2SD548
(Toshiba)
SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS. MOTOR CONTROL APPLICAT.
D549 - 2SD549
(Toshiba)
t
:
SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER)
2SD549
PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS.
7.9MAX.
Unit in m.
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Designed for high power switching applications, hammer drive, pulse motor drive ap.
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(GE)
NPN POWER DARLINGTON TRANSISTORS
D54D6D
400 VOLTS 6 AMP, 25 WATTS
Designed for igniter applications, high voltage switching appl ications.
Features:.
D54FY7D - NPN POWER DARLINGTON TRANSISTORS
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D54FY7D
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Designed for high power switching applications, hammer drive, pulse motor drive ap.
D5001UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D5001UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2
D
3
E
F
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS R.
D5002UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D5002UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2
D
3
E
F
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS R.
D5006UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D5006UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B
C
A
1
2
3
E
FG
6
5
4
J
D H K
QN
PIN 1 PIN 3 PIN 5
SOURCE.