Part number:
D54FY7D
Manufacturer:
GE
File Size:
235.56 KB
Description:
Npn power darlington transistors
D54FY7D
GE
235.56 KB
Npn power darlington transistors
* High DC Current Gain: hFE = 2000 (Min.) (at VCE = 3V, IC = 3A)
* Low Saturation Voltage: VCE(sat) = 1.5V (Max.) (at IC = 3A)
* Complementary to D55FV7D
* Isolated TO-220 package EQUIVALENT CIRCUIT BASE o
* -""
* -1~
* -{ CASE STYLE TO-2201S DIMEN
📁 Related Datasheet
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(Toshiba)
SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS. MOTOR CONTROL APPLICAT.
D549 - 2SD549
(Toshiba)
t
:
SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER)
2SD549
PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS.
7.9MAX.
Unit in m.
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Designed for high power switching applications, hammer drive, pulse motor drive ap.
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(GE)
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D54D6D
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Designed for igniter applications, high voltage switching appl ications.
Features:.
D54H6D - NPN POWER DARLINGTON TRANSISTORS
(GE)
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D54H6D
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Features:.
D5001UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D5001UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2
D
3
E
F
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS R.
