* High DC Current Gain: hFE =2000 (Min.) (at VCE =-3V, IC =-3A)
* Low Saturation Voltage: VCE(sat) =-1.5V (Max.) (at IC =-3A)
* Complementary to D54FY7D
* Isolated TO-220 package CASE STYLE TO-2201S DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .406(10.3) MAX. EQUIVAL
D55FY7D
GE
228.38 KB
Pnp power darlington transistors.
PNP POWER DARLINGTON TRANSISTORS
D55FY7D
-80 VOLTS -7 AMP, 30 WATTS
Designed for high power switching applications, hammer drive, pulse motor drive .
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D5001UK - METAL GATE RF SILICON FET
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TetraFET
D5001UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2
D
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E
F
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DMOS R.
D5002UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D5002UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2
D
3
E
F
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS R.
D5006UK - METAL GATE RF SILICON FET
(Seme LAB)
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D5006UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B
C
A
1
2
3
E
FG
6
5
4
J
D H K
QN
PIN 1 PIN 3 PIN 5
SOURCE.
