D55NF06 - N-CHANNEL POWER MOSFET TRANSISTOR
12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.
Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
D55NF06 Features
* 12 3 TO-252/DPAK
* RDS(ON) = 23mȍ@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
* SYMBOL U55NF06 P55NF06 F55
