* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D82CM2
GE
188.34 KB
Field effect power transistor.
~D~~U
FIELD EFFECT POWER TRANSISTOR
IRFD220,221 D82CN2,M2
0.8 AMPERES 200, 150 VOLTS RDS(ON) = 0.8 il
This series of N-Channel Enhancement-mode Powe.
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D82CK2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRFD120,121 D82CL2,K2
1.3 AMPERES 100,60 VOLTS
RDS(ON) = 0.3 n
This series of N-Channel Enhancement-mode Power .
D82CL2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRFD120,121 D82CL2,K2
1.3 AMPERES 100,60 VOLTS
RDS(ON) = 0.3 n
This series of N-Channel Enhancement-mode Power .
D82CN2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~U
FIELD EFFECT POWER TRANSISTOR
IRFD220,221 D82CN2,M2
0.8 AMPERES 200, 150 VOLTS RDS(ON) = 0.8 il
This series of N-Channel Enhancement-mode Powe.
D82CQ1 - FIELD EFFECT POWER TRANSISTOR
(GE)
~o~~
FIELD EFFECT PO'NER TRANSISTOR
IRFD320,321 D82CQ2.Q1
0.5 AMPERES 400, 350 VOLTS RDS(ON} = 1.8 0
This series of N-Channel Enhancement-mode Power.
