D82CN2 Datasheet - GE

D82CN2 FIELD EFFECT POWER TRANSISTOR

~D~~U FIELD EFFECT POWER TRANSISTOR IRFD220,221 D82CN2,M2 0.8 AMPERES 200, 150 VOLTS RDS(ON) = 0.8 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area.

D82CN2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D82CN2 Datasheet (188.34 KB)

D82CN2 Datasheet Preview — Preview of D82CN2 PDF

Datasheet Details

Part number:

D82CN2

Manufacturer:

File Size:

188.34 KB

Description:

Field effect power transistor.

📁 Related Datasheet

D82C288 Bus Controller (Intel)

D82C288 Bus Controller (AMD)

D82C43 UPD82C43 (NEC)

D82C55AC UPD82C55AC (NEC)

D82CK2 FIELD EFFECT POWER TRANSISTOR (GE)

D82CL2 FIELD EFFECT POWER TRANSISTOR (GE)

D82CM2 FIELD EFFECT POWER TRANSISTOR (GE)

D82CQ1 FIELD EFFECT POWER TRANSISTOR (GE)

D82CQ2 FIELD EFFECT POWER TRANSISTOR (GE)

D8203 64K DRAM Controller (Intel)

TAGS

D82CN2 FIELD EFFECT POWER TRANSISTOR GE

D82CN2 Distributor