D86DN2 Datasheet - GE

D86DN2 FIELD EFFECT POWER TRANSISTOR

~D~[?~ FIELD EFFECT POWER TRANSISTOR IRF230,231 D86DN2,M2 9.0 AMPERES 200,150 VOLTS ROS(ON} = 0.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power OMOS technology to achieve low on-resistance with excellent device ruggedness and reliability, This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area w.

D86DN2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D86DN2-GE.pdf

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Datasheet Details

Part number:

D86DN2

Manufacturer:

File Size:

199.38 KB

Description:

Field effect power transistor.

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