D86DR1, D86DR2 Datasheet - GE

D86DR1 FIELD EFFECT POWER TRANSISTOR

~D~[P~U FIELD EFFECT POWER TRANSISTOR IRF430,431 D86DR2,R1 4.SAMPERES SOO, 4S0 VOLTS ROS(ON) = 1.S!l This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area .

D86DR1 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D86DR2-GE.pdf

D86DR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: D86DR1, D86DR2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

D86DR1, D86DR2

Manufacturer:

File Size:

197.58 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: D86DR1, D86DR2.
Please refer to the document for exact specifications by model.

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D86DR1 D86DR2 FIELD EFFECT POWER TRANSISTOR GE

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