* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D86DQ1
GE
202.10 KB
Field effect power transistor.
~[RjD~~
FIELD EFFECT POWER TRANSISTOR
IRF330,331 086002,01
5.5 AMPERES 400, 350 VOLTS ROS(ON) = 1.0!l
This series of N-Channel Enhancement-mode Powe.
📁 Related Datasheet
D86DQ2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~[RjD~~
FIELD EFFECT POWER TRANSISTOR
IRF330,331 086002,01
5.5 AMPERES 400, 350 VOLTS ROS(ON) = 1.0 l
This series of N-Channel Enhancement-mode Powe.
D86DK2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~U
FIELD EFFECT POWER TRANSISTOR
IRF130,131 D86DL2,K2
14.0 AMPERES 100, 60 VOLTS
RDS(ON) =0.18 0.
This series of N-Channel Enhancement-mode Power.
D86DL2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~U
FIELD EFFECT POWER TRANSISTOR
IRF130,131 D86DL2,K2
14.0 AMPERES 100, 60 VOLTS
RDS(ON) =0.18 0.
This series of N-Channel Enhancement-mode Power.
D86DM2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[?~
FIELD EFFECT POWER TRANSISTOR
IRF230,231 D86DN2,M2
9.0 AMPERES 200,150 VOLTS
ROS(ON} = 0.4 n
This series of N-Channel Enhancement-mode Power .
D86DN2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[?~
FIELD EFFECT POWER TRANSISTOR
IRF230,231 D86DN2,M2
9.0 AMPERES 200,150 VOLTS
ROS(ON} = 0.4 n
This series of N-Channel Enhancement-mode Power .
D86DR1 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~U
FIELD EFFECT POWER TRANSISTOR
IRF430,431 D86DR2,R1
4.SAMPERES SOO, 4S0 VOLTS ROS(ON) = 1.S l
This series of N-Channel Enhancement-mode Power.
D86DR2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~U
FIELD EFFECT POWER TRANSISTOR
IRF430,431 D86DR2,R1
4.SAMPERES SOO, 4S0 VOLTS ROS(ON) = 1.S l
This series of N-Channel Enhancement-mode Power.
D862 - 2SD862
(Wing Shing Computer Components)
2SD862
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelo.
