D88FR2, D88FR1 Datasheet - GE

D88FR2 FIELD EFFECT POWER TRANSISTOR

~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFP451 ~450 D88FR1,R2 13 AMPERES 450, 500 VOLTS ROS(ON) =0.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating.

D88FR2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D88FR1-GE.pdf

D88FR2 Datasheet Preview — This datasheet PDF includes multiple part numbers: D88FR2, D88FR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

D88FR2, D88FR1

Manufacturer:

File Size:

187.14 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: D88FR2, D88FR1.
Please refer to the document for exact specifications by model.

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TAGS

D88FR2 D88FR1 FIELD EFFECT POWER TRANSISTOR GE

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