* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF133
GE
197.28 KB
Field effect power transistor.
~D~~~U IRFF132,133
FIELD EFFECT POVVER TRANSISTOR
7.0 AMPERES 100, 60 VOLTS
ROS(ON) =0.25 .0.
Preliminary
This series of N-Channel Enhancement-mod.
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