IRFF133 Datasheet - GE

IRFF133 FIELD EFFECT POWER TRANSISTOR

~D~~~U IRFF132,133 FIELD EFFECT POVVER TRANSISTOR 7.0 AMPERES 100, 60 VOLTS ROS(ON) =0.25 .0. Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operatin.

IRFF133 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF133 Datasheet (197.28 KB)

IRFF133 Datasheet Preview — Preview of IRFF133 PDF

Datasheet Details

Part number:

IRFF133

Manufacturer:

File Size:

197.28 KB

Description:

Field effect power transistor.

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IRFF133 FIELD EFFECT POWER TRANSISTOR GE

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