Datasheet Details
- Part number
- IRFF212
- Manufacturer
- GE
- File Size
- 191.01 KB
- Datasheet
- IRFF212-GE.pdf
- Description
- FIELD EFFECT POWER TRANSISTOR
IRFF212 Description
~D~~~lJ FIELD EFFECT PONER TRANSISTOR IRFF212,213 1.8 AMPERES 200, 150 VOLTS ROS(ON} = 2.4 n Preliminary This series of N-Channel Enhancement-mode P.
IRFF212 Features
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching -Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
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