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IRFF212 - FIELD EFFECT POWER TRANSISTOR

IRFF212 Description

~D~~~lJ FIELD EFFECT PONER TRANSISTOR IRFF212,213 1.8 AMPERES 200, 150 VOLTS ROS(ON} = 2.4 n Preliminary This series of N-Channel Enhancement-mode P.

IRFF212 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching -Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

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Datasheet Details

Part number
IRFF212
Manufacturer
GE
File Size
191.01 KB
Datasheet
IRFF212-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

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FIELD EFFECT POWER TRANSISTOR GE
GE IRFF212-like datasheet