IRFF212 - FIELD EFFECT POWER TRANSISTOR
~D~~~lJ FIELD EFFECT PONER TRANSISTOR IRFF212,213 1.8 AMPERES 200, 150 VOLTS ROS(ON} = 2.4 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating a
IRFF212 Features
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching -Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
