IRFF212 Datasheet - GE

IRFF212 FIELD EFFECT POWER TRANSISTOR

~D~~~lJ FIELD EFFECT PONER TRANSISTOR IRFF212,213 1.8 AMPERES 200, 150 VOLTS ROS(ON} = 2.4 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating a.

IRFF212 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching -Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF212-GE.pdf

IRFF212 Datasheet Preview — Preview of IRFF212 PDF

Datasheet Details

Part number:

IRFF212

Manufacturer:

File Size:

191.01 KB

Description:

Field effect power transistor.

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