Datasheet4U Logo Datasheet4U.com

IRFF222 Datasheet - GE

IRFF222 FIELD EFFECT POWER TRANSISTOR

~D~[ ~lf FIELD EFFECT POVVER TRANSISTOR IRFF222,223 3 AMPERES 200, 150 VOLTS ROS(ON) = 1.2 n Preliminary This series of N-Channel Enhancement-mode Power .MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operat.

IRFF222 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF222 Datasheet (197.12 KB)

Preview of IRFF222 PDF
IRFF222 Datasheet Preview Page 2

Datasheet Details

Part number:

IRFF222

Manufacturer:

GE

File Size:

197.12 KB

Description:

Field effect power transistor.

📁 Related Datasheet

IRFF220 N-Channel Power MOSFET (Intersil Corporation)

IRFF220 N-Channel MOSFET (International Rectifier)

IRFF220 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF221 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF223 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF210 N-Channel Power MOSFET (Intersil Corporation)

IRFF210 TRANSISTORS (International Rectifier)

IRFF210 FIELD EFFECT POWER TRANSISTOR (GE)

TAGS

IRFF222 FIELD EFFECT POWER TRANSISTOR GE

IRFF222 Distributor