* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF222
GE
197.12 KB
Field effect power transistor.
~D~[ ~lf FIELD EFFECT POVVER TRANSISTOR IRFF222,223 3 AMPERES 200, 150 VOLTS ROS(ON) = 1.2 n Preliminary This series of N-Channel Enhancement-mo.
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