* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF221
GE
199.78 KB
Field effect power transistor.
~D~[P~U FIELD EFFECT POVVER TRANSISTOR IRFF220,221 3.5 AMPERES 200, 150 VOLTS ROS(ON) =0.8 n Preliminary This series of N-Channel Enhancement-mode P.
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