* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF231
GE
186.54 KB
Field effect power transistor.
~~D~[P~U IRFF230,231 FIELD EFFECT POWER TRANSISTOR 5.5 AMPERES 200,150 VOLTS ROS(ON) =0.4 n Preliminary This series of N-Channel Enhancement-mode .
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