IRFF231 Datasheet - GE

IRFF231 FIELD EFFECT POWER TRANSISTOR

~~D~[P~U IRFF230,231 FIELD EFFECT POWER TRANSISTOR 5.5 AMPERES 200,150 VOLTS ROS(ON) =0.4 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating .

IRFF231 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF231 Datasheet (186.54 KB)

IRFF231 Datasheet Preview — Preview of IRFF231 PDF

Datasheet Details

Part number:

IRFF231

Manufacturer:

File Size:

186.54 KB

Description:

Field effect power transistor.

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IRFF231 FIELD EFFECT POWER TRANSISTOR GE

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