IRFF233 Datasheet - GE

IRFF233 FIELD EFFECT POWER TRANSISTOR

~~D~~ FIELD EFFECT POYIER TRANSISTOR IRFF232,233 4.5 AMPERES 200, 150 VOLTS ROS(ON) =0.6 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS te'chnology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating ar.

IRFF233 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF233 Datasheet (184.49 KB)

IRFF233 Datasheet Preview — Preview of IRFF233 PDF

Datasheet Details

Part number:

IRFF233

Manufacturer:

File Size:

184.49 KB

Description:

Field effect power transistor.

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IRFF233 FIELD EFFECT POWER TRANSISTOR GE

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