* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF233
GE
184.49 KB
Field effect power transistor.
~~D~~ FIELD EFFECT POYIER TRANSISTOR IRFF232,233 4.5 AMPERES 200, 150 VOLTS ROS(ON) =0.6 n Preliminary This series of N-Channel Enhancement-mode Pow.
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