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IRFF232 - FIELD EFFECT POWER TRANSISTOR

IRFF232 Description

~~D~~ FIELD EFFECT POYIER TRANSISTOR IRFF232,233 4.5 AMPERES 200, 150 VOLTS ROS(ON) =0.6 n Preliminary This series of N-Channel Enhancement-mode Pow.

IRFF232 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

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Datasheet Details

Part number
IRFF232
Manufacturer
GE
File Size
184.49 KB
Datasheet
IRFF232-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

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