IRFF220 Datasheet - Intersil Corporation

IRFF220 N-Channel Power MOSFET

IRFF220 Data Sheet March 1999 File Number 1889.3 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching.

IRFF220 Features

* 3.5A, 200V

* rDS(ON) = 0.800Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFF220 Datasheet (325.05 KB)

IRFF220 Datasheet Preview — Preview of IRFF220 PDF

Datasheet Details

Part number:

IRFF220

Manufacturer:

Intersil Corporation

File Size:

325.05 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

IRFF220 N-Channel MOSFET (International Rectifier)

IRFF220 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF221 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF222 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF223 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF210 N-Channel Power MOSFET (Intersil Corporation)

IRFF210 TRANSISTORS (International Rectifier)

IRFF210 FIELD EFFECT POWER TRANSISTOR (GE)

TAGS

IRFF220 N-Channel Power MOSFET Intersil Corporation

IRFF220 Distributor