IRFF223, IRFF222 Datasheet - GE

IRFF223 FIELD EFFECT POWER TRANSISTOR

~D~[ ~lf FIELD EFFECT POVVER TRANSISTOR IRFF222,223 3 AMPERES 200, 150 VOLTS ROS(ON) = 1.2 n Preliminary This series of N-Channel Enhancement-mode Power .MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operat.

IRFF223 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF222-GE.pdf

IRFF223 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFF223, IRFF222. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFF223, IRFF222

Manufacturer:

File Size:

197.12 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: IRFF223, IRFF222.
Please refer to the document for exact specifications by model.

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TAGS

IRFF223 IRFF222 FIELD EFFECT POWER TRANSISTOR GE

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