IRFF210 - TRANSISTORS
(International Rectifier)
PD-90424D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF210
20.
IRFF210 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~ IRFF210,211
FIELD EFFECT POWER TRANSISTOR
2.2 AMPERES 200, 150 VOLTS
ROS(ON) =1.5 il
Preliminary
This series of N-Channel Enhancement-mode' P.
IRFF211 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~ IRFF210,211
FIELD EFFECT POWER TRANSISTOR
2.2 AMPERES 200, 150 VOLTS
ROS(ON) =1.5 il
Preliminary
This series of N-Channel Enhancement-mode' P.
IRFF212 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~~lJ
FIELD EFFECT PONER TRANSISTOR
IRFF212,213
1.8 AMPERES 200, 150 VOLTS
ROS(ON} = 2.4 n
Preliminary
This series of N-Channel Enhancement-mode P.
IRFF213 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~~lJ
FIELD EFFECT PONER TRANSISTOR
IRFF212,213
1.8 AMPERES 200, 150 VOLTS
ROS(ON} = 2.4 n
Preliminary
This series of N-Channel Enhancement-mode P.
IRFF220 - N-Channel Power MOSFET
(Intersil Corporation)
IRFF220
Data Sheet March 1999 File Number 1889.3
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power fiel.