IRFF210 Datasheet - Intersil Corporation

IRFF210 N-Channel Power MOSFET

IRFF210 Data Sheet March 1999 File Number 1887.3 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching.

IRFF210 Features

* 2.2A, 200V

* rDS(ON) = 1.500Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFF210_IntersilCorporation.pdf

IRFF210 Datasheet Preview — Preview of IRFF210 PDF

Datasheet Details

Part number:

IRFF210

Manufacturer:

Intersil Corporation

File Size:

325.79 KB

Description:

N-channel power mosfet.

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IRFF210 IRFF210 N-Channel Power MOSFET Intersil Corporation

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