IRFF310 Datasheet - Intersil Corporation

IRFF310 N-Channel Power MOSFET

IRFF310 Data Sheet March 1999 File Number 1888.3 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switchin.

IRFF310 Features

* 1.35A, 400V

* rDS(ON) = 3.600Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines fo

IRFF310 Datasheet (326.14 KB)

IRFF310 Datasheet Preview — Preview of IRFF310 PDF

Datasheet Details

Part number:

IRFF310

Manufacturer:

Intersil Corporation

File Size:

326.14 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

IRFF310 HEXFET TRANSISTORS (International Rectifier)

IRFF310 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF311 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF312 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF313 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF320 N-Channel Power MOSFET (Intersil Corporation)

IRFF320 HEXFET TRANSISTORS (International Rectifier)

IRFF320 FIELD EFFECT POWER TRANSISTOR (GE)

TAGS

IRFF310 N-Channel Power MOSFET Intersil Corporation

IRFF310 Distributor