* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF311
GE
187.83 KB
Field effect power transistor.
~~D~[F~ IRFF310,311 FIELD EFFECT POWER TRANSISTOR 1.35 AMPERES 400, 350 VOLTS ROS(ON) = 3.6 n Preliminary This series of N-Channel Enhancement-mod.
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