IRFF311 Datasheet - GE

IRFF311 FIELD EFFECT POWER TRANSISTOR

~~D~[F~ IRFF310,311 FIELD EFFECT POWER TRANSISTOR 1.35 AMPERES 400, 350 VOLTS ROS(ON) = 3.6 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operatin.

IRFF311 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF311 Datasheet (187.83 KB)

IRFF311 Datasheet Preview — Preview of IRFF311 PDF

Datasheet Details

Part number:

IRFF311

Manufacturer:

File Size:

187.83 KB

Description:

Field effect power transistor.

📁 Related Datasheet

IRFF310 N-Channel Power MOSFET (Intersil Corporation)

IRFF310 HEXFET TRANSISTORS (International Rectifier)

IRFF310 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF312 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF313 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF320 N-Channel Power MOSFET (Intersil Corporation)

IRFF320 HEXFET TRANSISTORS (International Rectifier)

IRFF320 FIELD EFFECT POWER TRANSISTOR (GE)

TAGS

IRFF311 FIELD EFFECT POWER TRANSISTOR GE

IRFF311 Distributor