IRFF320 Datasheet - Intersil Corporation

IRFF320 N-Channel Power MOSFET

IRFF320 Data Sheet March 1999 File Number 1890.4 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching.

IRFF320 Features

* 2.5A, 400V

* rDS(ON) = 1.800Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFF320 Datasheet (325.41 KB)

IRFF320 Datasheet Preview — Preview of IRFF320 PDF

Datasheet Details

Part number:

IRFF320

Manufacturer:

Intersil Corporation

File Size:

325.41 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

IRFF320 HEXFET TRANSISTORS (International Rectifier)

IRFF320 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF321 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF322 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF323 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF310 N-Channel Power MOSFET (Intersil Corporation)

IRFF310 HEXFET TRANSISTORS (International Rectifier)

IRFF310 FIELD EFFECT POWER TRANSISTOR (GE)

TAGS

IRFF320 N-Channel Power MOSFET Intersil Corporation

IRFF320 Distributor