* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF312
GE
186.76 KB
Field effect power transistor.
~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFF312,313 1.15 AMPERES 400, 350 VOLTS ROS(ON) =5.0 !l Preliminary This series of N-Channel Enhancement-mode .
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