IRFF312 Datasheet - GE

IRFF312 FIELD EFFECT POWER TRANSISTOR

~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFF312,313 1.15 AMPERES 400, 350 VOLTS ROS(ON) =5.0 !l Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating .

IRFF312 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF312 Datasheet (186.76 KB)

IRFF312 Datasheet Preview — Preview of IRFF312 PDF

Datasheet Details

Part number:

IRFF312

Manufacturer:

File Size:

186.76 KB

Description:

Field effect power transistor.

📁 Related Datasheet

IRFF310 N-Channel Power MOSFET (Intersil Corporation)

IRFF310 HEXFET TRANSISTORS (International Rectifier)

IRFF310 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF311 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF313 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF320 N-Channel Power MOSFET (Intersil Corporation)

IRFF320 HEXFET TRANSISTORS (International Rectifier)

IRFF320 FIELD EFFECT POWER TRANSISTOR (GE)

TAGS

IRFF312 FIELD EFFECT POWER TRANSISTOR GE

IRFF312 Distributor