IRFF323

FIELD EFFECT POWER TRANSISTOR

Image	Manufacturer	P/N	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Harris Semiconductor	IRFF323	IRFF323	POWER FIELD-EFFECT TRANSISTOR, 2A I(D), 350V, 2.5OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF	Quest Components	20	0	$0	🛒 Buy Now

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Datasheet Details

Part number:

IRFF323

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📥 IRFF323 Datasheet PDF

Description:

Field effect power transistor.
~D~~ IRFF322,323 FIELD EFFECT PONER TRANSISTOR 2.0 AMPERES 400, 350 VOLTS . ROS(ON) = 2.5 n Preli.
minary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS te.

✔ IRFF323 Features

Polysilicon gate - Improved stability and reliability
No secondary breakdown - Excellent ruggedness
Ultra-fast switching - Independent of temperature
Voltage cont

✔ IRFF323 Application

including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended sa

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IRFF323 FIELD EFFECT POWER TRANSISTOR GE