IRFF321

FIELD EFFECT POWER TRANSISTOR

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Harris Semiconductor	IRFF321	2.5A, 350V, 1.8 OHM, N-Channel POWER MOSFET	Rochester Electronics	164	100000 units	$0.42	🛒 Buy Now

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IRFF321

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186.21 KB

Description:

Field effect power transistor.
~~D~~~ IRFF320,321 FIELD EFFECT POVVER TRANSISTOR 2.5 AMPERES 400, 350 VOLTS RDS(ON) = 1.8 n Prel.
iminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS t.

✔ IRFF321 Features

Polysilicon gate - Improved stability and reliability
No secondary breakdown - Excellent ruggedness
Ultra-fast switching - Independent of temperature
Voltage cont

✔ IRFF321 Application

including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended sa

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IRFF321 FIELD EFFECT POWER TRANSISTOR GE

Datasheet Details

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✔ IRFF321 Features

✔ IRFF321 Application

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