IRFF322 Datasheet - GE

IRFF322 FIELD EFFECT POWER TRANSISTOR

~D~~ IRFF322,323 FIELD EFFECT PONER TRANSISTOR 2.0 AMPERES 400, 350 VOLTS . ROS(ON) = 2.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating .

IRFF322 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF322 Datasheet (189.39 KB)

IRFF322 Datasheet Preview — Preview of IRFF322 PDF

Datasheet Details

Part number:

IRFF322

Manufacturer:

File Size:

189.39 KB

Description:

Field effect power transistor.

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IRFF322 FIELD EFFECT POWER TRANSISTOR GE

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