IRFF332 Datasheet (GE) - FIELD EFFECT POWER TRANSISTOR

IRFF332, FIELD EFFECT POWER TRANSISTOR

~o~[f~ IRFF332,333 FIELD EFFECT POVVER TRANSISTOR 3.0 AMPERES 400, 350 VOLTS ROS(ON) = 1.5!} Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating

IRFF332 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement