IRFF120 Datasheet - Intersil Corporation

IRFF120 N-Channel Power MOSFET

IRFF120 Data Sheet March 1999 File Number 1563.3 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching.

IRFF120 Features

* 6.0A, 100V

* rDS(ON) = 0.300Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334, “Guidelines fo

IRFF120_IntersilCorporation.pdf

IRFF120 Datasheet Preview — Preview of IRFF120 PDF

Datasheet Details

Part number:

IRFF120

Manufacturer:

Intersil Corporation

File Size:

325.85 KB

Description:

N-channel power mosfet.

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IRFF120 IRFF120 N-Channel Power MOSFET Intersil Corporation

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