IRFF211 Datasheet - GE

IRFF211 FIELD EFFECT POWER TRANSISTOR

~D~~ IRFF210,211 FIELD EFFECT POWER TRANSISTOR 2.2 AMPERES 200, 150 VOLTS ROS(ON) =1.5 il Preliminary This series of N-Channel Enhancement-mode' Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating a.

IRFF211 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF211 Datasheet (189.28 KB)

IRFF211 Datasheet Preview — Preview of IRFF211 PDF

Datasheet Details

Part number:

IRFF211

Manufacturer:

File Size:

189.28 KB

Description:

Field effect power transistor.

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IRFF211 FIELD EFFECT POWER TRANSISTOR GE

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