* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF211
GE
189.28 KB
Field effect power transistor.
~D~~ IRFF210,211
FIELD EFFECT POWER TRANSISTOR
2.2 AMPERES 200, 150 VOLTS
ROS(ON) =1.5 il
Preliminary
This series of N-Channel Enhancement-mode' P.
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