Datasheet Specifications
- Part number
- 2SB834
- Manufacturer
- GME
- File Size
- 178.55 KB
- Datasheet
- 2SB834-GME.pdf
- Description
- PNP Epitaxial Silicon Transistor
Description
PNP Epitaxial Silicon Transistor .
Features
* z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production specification 2SB834 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter2SB834 Distributors
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