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2SB834 PNP Epitaxial Silicon Transistor

2SB834 Description

PNP Epitaxial Silicon Transistor .

2SB834 Features

* z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production specification 2SB834 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter

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Datasheet Details

Part number
2SB834
Manufacturer
GME
File Size
178.55 KB
Datasheet
2SB834-GME.pdf
Description
PNP Epitaxial Silicon Transistor

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PNP Epitaxial Silicon Transistor GME
GME 2SB834-like datasheet