Part number:
2SB834
Manufacturer:
GME
File Size:
178.55 KB
Description:
Pnp epitaxial silicon transistor.
Datasheet Details
2SB834 Features
* z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production specification 2SB834 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter
Datasheet Details
2SB834
GME
178.55 KB
Pnp epitaxial silicon transistor.
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