2SB834 Datasheet - GME

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2SB834 PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor .

2SB834-GME.pdf

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Datasheet Details

Part number:

2SB834

Manufacturer:

GME

File Size:

178.55 KB

Description:

PNP Epitaxial Silicon Transistor

Features

* z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production specification 2SB834 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter

2SB834 Distributors

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2SB834 PNP Epitaxial Silicon Transistor GME

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