z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A.
z DC Current Gain HFE=60-200@IC=0.5A.
z Complememtary to PNP 2SD880.
Pb
Lead-free
Production
2SB831, Kexin
SMD Type
Silicon PNP Epitaxial 2SB831
Transistors IC
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Features
+0.1 2.4-0.1
+0.1 1.3-0.1
Low frequency .
2SB833, Toshiba
2SB833
SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES . High Collector Current : Ic=-30A . High D.
2SB834, Toshiba
:
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB834
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES
C.3 MAX.
Unit in mm
3.6±C
• Low Co.
2SB834, Weitron Technology
.DataSheet.co.kr
2SB834
PNP Silicon Epitaxial Power Transistor
P b Lead(Pb)-Free
Features: * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat.
