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2SB1184 - Power Transistor

2SB1184 Description

Production specification Power Transistor .

2SB1184 Applications

* z z Epitaxial planar type. PNP silicon transistor. TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Collector-Base Volage Value Units VCBO -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

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Datasheet Details

Part number
2SB1184
Manufacturer
GME
File Size
209.26 KB
Datasheet
2SB1184-GME.pdf
Description
Power Transistor

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Power Transistor GME
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