2SB1189
GME
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Medium power transistor.
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2SB1180 - Silicon PNP Transistor
(Panasonic)
Power Transistors
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
Unit: mm
For medium-speed voltage switching Complementary to 2SD175.
2SB1180A - Silicon PNP Transistor
(Panasonic)
Power Transistors
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
Unit: mm
For medium-speed voltage switching Complementary to 2SD175.
2SB1181 - Power Transistor
(Rohm)
2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
Parameter
VCEO IC
Value
-80V -1.0A
lOutline
MPT3
Base Collector
Emitter
lFeatures
1) Suit.
2SB1181 - Power Transistor
(Kexin)
SMD Type
Power Transistor 2SB1181
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Hight breakdown voltage and hi.
2SB1182 - Medium power Transistor
(Rohm)
Medium power transistor (32V, 2A)
2SB1182 / 2SB1240
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758.
2SB1182 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SB1182
Rev.E May.-2016
DATA SHEET
/ Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.
/ Features
, 2SD1758 。 Low.
2SB1182 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1182
DESCRIPTION ·Small and slim package ·100% tested ·Minimum Lot-to-Lot variations for .
2SB1182 - Medium Power Transistor
(Kexin)
SMD Type
Medium Power Transistor 2SB1182
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low VCE(sat). Epitaxial.
2SB1182 - PNP PLASTIC ENCAPSULATE TRANSISTORS
(Weitron)
2SB1182
PNP PLASTIC ENCAPSULATE TRA NSISTORS
P b Lead(Pb)-Free
1.BASE 2.COLLECTOR 3.EMITTER 1 2 3
D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Ra.
2SB1182 - PNP TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SB1182
PNP SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB1182 is a medium power .
