z Suitable for output stage of 1 watts amplifier.
z High DC current gain. z Small flat package. z PC=1.0 to 2.0W. z Complements the 2SA1204.
Pb
Lead-free
Production spe
2SC2880, Kexin
SMD Type
High Voltage Switching Applications 2SC2880
Transistors
Features
High Voltage : VCEO = 150V High Transition Frequency : fT = 120MHz(typ.) S.
2SC2881, GME
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
High voltage:VCEO=120V High transition frequency;fT=120MHz. PC=500mW.
2SC2881, Toshiba Semiconductor
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2881
Voltage Amplifier Applications Power Amplifier Applications
2SC2881
Unit: mm
• H.
2SC2881, HOTTECH
Plastic-Encapsulate Transistors
FEATURES
• High voltage:VCEO=120V • High transition frequency;fT=120MHz. • PC=500mW. • Complements the 2SA1201.
Maxi.
2SC2881, UTC
UNISONIC TECHNOLOGIES CO., LTD
2SC2881
NPN SILICON TRANSISTOR
VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS
FEATURES
* High voltag.
2SC2881, Kexin
SMD Type
Voltage Amplifier Applications 2SC2881
Transistors
Features
High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.) Small .
