2SC2880 Silicon NPN Triple Diffused TRANSISTOR

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications * High voltage: VCEO = 15.

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Datasheet Specifications

Part number: 2SC2880
Manufacturer: Toshiba ↗ Semiconductor
File Size: 116.04 KB
Datasheet: 2SC2880_ToshibaSemiconductor.pdf
Description: Silicon NPN Triple Diffused TRANSISTOR

Applications

* High voltage: VCEO = 150 V
* High transition frequency: fT = 120 MHz
* Small flat package
* PC = 1.0 to 2.0 W (mounted on ceramic substrate)
* Complementary to 2SA1200 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter volta

2SC2880 Distributors

📁 Related Datasheet

2SC2881 2SC2881-O 2SC2881-Y 2SC2881A 2SC2883-O 2SC2883-Y

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2SC2880 Silicon NPN Triple Diffused TRANSISTOR Toshiba Semiconductor

Toshiba Semiconductor 2SC2880-like datasheet