2SC2880 Datasheet - Toshiba Semiconductor

2SC2880 Silicon NPN Triple Diffused TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications High voltage: VCEO = 150 V High transition frequency: fT = 120 MHz Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1200 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipati.

2SC2880 Datasheet (116.04 KB)