Part number:
B5819WS
Manufacturer:
GME
File Size:
147.28 KB
Description:
Schottky barrier diode.
* Extremely low VF .
* Low stored change,majority carrier conduction
* Low power loss/high efficient.
* MSL 1. APPLICATIONS Pb Lead-free
* For Use In Low Voltage, High Frequency Inverters.
* Free Wheeling, And Polarity Protection Applications. B5818WS-B5819WS SOD-323 ORDE
B5819WS
GME
147.28 KB
Schottky barrier diode.
📁 Related Datasheet
B5819W - SCHOTTKY BARRIER DIODE
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
B5817W-5819W SCHOTTKY BARRIER DIODE
FEATURES For use in low vo.
B5819W - Schottky Barrier Diode
(Rectron)
SOD-123 Plastic-Encapsulated Schottky Barrier Diode
B5817W THRU
B5819W
Features High Current Capability Low Forward Voltage Drop P/N suffix V means .
B5819W - SCHOTTKY DIODES
(AiT Components)
AiT Components Inc.
.ait-ponents.
B5817W~B5819W
SCHOTTKY DIODES
SCHOTTKY BARRIER DIODE
DESCRIPTION
The B5817W~B5819W are available in SOD-1.
B5819W - SURFACE MOUNT SCHOTTKY BARRIER DIODE
(LITE-ON)
SURFACE MOUNT SCHOTTKY BARRIER DIODE
B5817W thru B5819W
REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 1 Ampere
FEATURES
• For use in low voltag.
B5819W - Schottky Barrier Diode
(GME)
Production specification
Schottky Barrier Diode
FEATURES
Extremely low VF. Low stored change,majority carrier
conduction Low power loss/high ef.
B5819W - SCHOTTKY DIODE
(Shunye)
B5817W THRU B5819W
1.80(.071) 1.40(.055)
SOD-123
1.65(.065) 1.55(.061)
3.86(0.152) 3.56(0.145)
2.84(0.112) 2.54(0.100)
3.9(0.154) 3.7(0.146)
2..
B5819W - Schottky Diode
(Taiwan Semiconductor)
Small Signal Product
B5817W/B5818W/B5819W
Taiwan Semiconductor
SOD-123 40V/1A Schottky Diode
FEATURES
- Low Forward Voltage Drop - Surface Mounted .
B5819W - Schottky Barrier Diode
(LGE)
B5817W-B5819W
Schottky Barrier Diode
+
SOD-123
0.053(1.35) Max.
0.022(0.55) Typ. Min.
Features
-
For use in low voltage, high frequency inverter.
